Manufacturer Part Number
FDMS86252L
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET with low on-resistance and high power density for efficient power conversion and control applications.
Product Features and Performance
Low on-resistance (56mΩ typical) for improved energy efficiency
High current capability (4.4A continuous drain current) enables high power density designs
Fast switching speeds and low gate charge for high-frequency operation
Operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency due to low on-resistance
High power density enabled by high current capability
Versatile for a wide range of power conversion and control applications
Robust design for reliable operation in harsh environments
Key Technical Parameters
Drain-Source Voltage (Vdss): 150V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 56mΩ @ 4.4A, 10V
Continuous Drain Current (Id): 4.4A @ 25°C
Input Capacitance (Ciss): 1335pF @ 75V
Power Dissipation (Pd): 2.5W @ 25°C, 50W @ 100°C
Quality and Safety Features
RoHS3 compliant
Robust package design (8-PQFN 5x6) for high reliability
Compatibility
Suitable for a wide range of power conversion and control applications, including:
Switch-mode power supplies
Motor drives
Lighting ballasts
Industrial automation and control systems
Application Areas
Power conversion and control
Industrial electronics
Consumer electronics
Automotive electronics
Product Lifecycle
This product is currently in active production and not near discontinuation. Replacements and upgrades may be available in the future as technology evolves.
Key Reasons to Choose This Product
High power efficiency due to low on-resistance
High power density enabled by high current capability
Versatile for a wide range of applications
Robust and reliable design for operation in harsh environments
Compliance with RoHS3 regulations for environmental responsibility
FDMS8625Fairchild (onsemi)