Manufacturer Part Number
FDMS86200DC
Manufacturer
onsemi
Introduction
This product is a discrete semiconductor device, specifically a N-Channel MOSFET transistor.
Product Features and Performance
150V Drain-to-Source Voltage
17mΩ maximum On-Resistance @ 9.3A, 10V
3A Continuous Drain Current @ 25°C
28A Continuous Drain Current @ 100°C
2955pF maximum Input Capacitance @ 75V
2W Power Dissipation @ 25°C, 125W @ 100°C
Wide Operating Temperature Range: -55°C to 150°C
Product Advantages
High power density
Low on-resistance for efficient power conversion
Fast switching for high-frequency applications
Robust construction for reliable operation
Key Technical Parameters
N-Channel MOSFET
Vds: 150V
Vgs(Max): ±20V
Rds(on) @ 9.3A, 10V: 17mΩ
Id @ 25°C: 9.3A, Id @ 100°C: 28A
Ciss @ 75V: 2955pF
Power Dissipation @ 25°C: 3.2W, @ 100°C: 125W
Vgs(th) @ 250A: 4V
Qg @ 10V: 42nC
Quality and Safety Features
RoHS3 Compliant
8-PQFN (5x6) Package
Compatibility
Can be used in various power electronics applications such as DC-DC converters, motor drives, and power supplies.
Application Areas
Power Conversion
Motor Drives
Switch-Mode Power Supplies
Industrial Controls
Product Lifecycle
This product is an active, currently available part from onsemi. There are no indications of it nearing discontinuation, and replacements or upgrades may be available.
Key Reasons to Choose This Product
Excellent power density and efficiency due to low on-resistance
Robust design for reliable operation in harsh environments
Wide operating temperature range extends application versatility
Fast switching capability enables high-frequency power conversion
RoHS3 compliance for environmentally-friendly use
