Manufacturer Part Number
FDMS86163P
Manufacturer
onsemi
Introduction
The FDMS86163P is a high-performance P-channel MOSFET transistor from onsemi, designed for a wide range of power management and switching applications.
Product Features and Performance
100V Drain-Source Voltage (Vdss)
±25V Gate-Source Voltage (Vgs)
22mΩ On-Resistance (Rds(on)) at 7.9A, 10V
9A Continuous Drain Current (Id) at 25°C (Ta)
50A Continuous Drain Current (Id) at 100°C (Tc)
4085pF Input Capacitance (Ciss) at 50V
5W Power Dissipation at 25°C (Ta), 104W at 100°C (Tc)
Product Advantages
Low on-resistance for high efficiency
High current handling capability
High voltage rating for a wide range of applications
Compact 8-PQFN (5x6) package
Key Technical Parameters
MOSFET technology
P-channel type
4V Gate-Source Threshold Voltage (Vgs(th)) at 250μA
6V to 10V Drive Voltage range
59nC Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 compliant
Operating temperature range: -55°C to 150°C
Compatibility
Surface mount package
Compatible with various power management and switching applications
Application Areas
Power supplies
Motor drives
DC-DC converters
Battery management systems
Industrial and automotive electronics
Product Lifecycle
Current product, not nearing discontinuation
Replacements and upgrades available from onsemi
Key Reasons to Choose This Product
Excellent performance-to-size ratio with low on-resistance and high current handling
Robust design and wide operating temperature range
Compatibility with various power management and switching applications
Availability of replacements and upgrades from the manufacturer