Manufacturer Part Number
FDMS86150A
Manufacturer
onsemi
Introduction
High-performance N-channel power MOSFET transistor
Product Features and Performance
Low on-resistance: 4.85 mΩ @ 16A, 10V
High current capability: 16A continuous (at 25°C), 60A (at case temperature)
Wide operating voltage range: 100V drain-to-source voltage
Wide operating temperature range: -55°C to 150°C
Fast switching speed
Low gate charge: 66 nC @ 10V
Product Advantages
Efficient power conversion and control
Robust and reliable performance
Compact surface-mount package
Suitable for a wide range of power application
Key Technical Parameters
Drain-to-source voltage (Vdss): 100V
Gate-to-source voltage (Vgs): ±20V
On-resistance (Rds(on)): 4.85 mΩ @ 16A, 10V
Continuous drain current (Id): 16A (at 25°C), 60A (at case temperature)
Input capacitance (Ciss): 4665 pF @ 50V
Power dissipation: 2.7W (at ambient temperature), 113W (at case temperature)
Quality and Safety Features
RoHS3 compliant
Suitable for safety-critical applications
Compatibility
Designed for surface mount assembly
Compatible with standard MOSFET driver circuits
Application Areas
Switch-mode power supplies
Motor drives
Power amplifiers
Voltage regulators
Lighting control
Product Lifecycle
Currently in production
No known plans for discontinuation
Replacement or upgrade options may be available
Key Reasons to Choose This Product
Excellent power handling and efficiency
Compact and versatile packaging
Wide operating range and rugged performance
Suitable for a variety of power conversion and control applications
Reliable and proven technology from a trusted manufacturer