Manufacturer Part Number
FDMS86150
Manufacturer
onsemi
Introduction
High-performance, high-power, and high-efficiency N-Channel MOSFET suitable for a wide range of power conversion and control applications.
Product Features and Performance
100V Drain-Source Voltage Rating
Ultra-low On-Resistance of 4.85mΩ
High Continuous Drain Current of 16A at 25°C and 60A at 100°C
Low Input Capacitance of 4065pF
High Power Dissipation Capability of 2.7W at 25°C and 156W at 100°C
Wide Operating Temperature Range of -55°C to 150°C
Designed using onsemi's advanced PowerTrench MOSFET technology
Product Advantages
Excellent performance-to-cost ratio
Highly efficient power conversion
Compact and space-saving design
Reliable and robust operation
Key Technical Parameters
Drain-Source Voltage (Vdss): 100V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4.85mΩ @ 16A, 10V
Continuous Drain Current (Id): 16A (Ta), 60A (Tc)
Input Capacitance (Ciss): 4065pF @ 50V
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Gate Charge (Qg): 62nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Designed and manufactured to high quality and reliability standards
Compatibility
Suitable for a wide range of power conversion and control applications, including power supplies, motor drives, and other power electronics systems.
Application Areas
Power Supplies
Motor Drives
Inverters
Power Conversion Circuits
Industrial Electronics
Consumer Electronics
Product Lifecycle
Current production model
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Highly efficient power conversion
Compact and space-saving design
Reliable and robust operation
Wide range of applications
