Manufacturer Part Number
FDMS86105
Manufacturer
onsemi
Introduction
The FDMS86105 is a high-performance N-Channel MOSFET transistor from onsemi, designed for a wide range of power management and control applications.
Product Features and Performance
100V drain-to-source voltage (Vdss)
34mOhm maximum on-resistance (Rds(on)) at 6A, 10V
6A continuous drain current (Id) at 25°C ambient temperature (Ta)
26A continuous drain current (Id) at 25°C case temperature (Tc)
645pF maximum input capacitance (Ciss) at 50V
5W maximum power dissipation at 25°C ambient temperature (Ta)
48W maximum power dissipation at 25°C case temperature (Tc)
-55°C to 150°C operating temperature range
Product Advantages
Low on-resistance for improved efficiency
High current handling capability
Low input capacitance for fast switching
Compact 8-PQFN (5x6) package
Key Technical Parameters
N-Channel MOSFET
±20V maximum gate-to-source voltage (Vgs)
4V maximum gate threshold voltage (Vgs(th)) at 250A
6V and 10V recommended drive voltages
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
Suitable for a wide range of power management and control applications
Application Areas
Power supplies
Motor drives
Automotive electronics
Industrial controls
Product Lifecycle
Current product, no discontinuation plans
Upgrades and replacements available as needed
Key Reasons to Choose This Product
Excellent performance-to-cost ratio
Reliable and robust design
Compact package for space-constrained applications
Wide operating temperature range
