Manufacturer Part Number
FDMS86101
Manufacturer
onsemi
Introduction
High-performance N-channel MOSFET transistor designed for power management and control applications
Product Features and Performance
100V Drain-to-Source Voltage (Vdss)
±20V Gate-to-Source Voltage (Vgs)
8mΩ Maximum On-Resistance (Rds(on)) at 13A, 10V
4A Continuous Drain Current (Id) at 25°C ambient temperature
60A Continuous Drain Current (Id) at 25°C case temperature
3000pF Maximum Input Capacitance (Ciss) at 50V
5W Maximum Power Dissipation at 25°C ambient temperature
104W Maximum Power Dissipation at 25°C case temperature
Product Advantages
High efficiency power conversion
Low switching and conduction losses
Compact and thermally efficient package
Key Technical Parameters
N-Channel MOSFET Technology
4V Maximum Threshold Voltage (Vgs(th)) at 250A
6V to 10V Drive Voltage Range
55nC Maximum Gate Charge (Qg) at 10V
Quality and Safety Features
RoHS3 compliant
Suitable for industrial and automotive applications
Compatibility
Compatible with various power management and control circuits
Application Areas
Power supplies
Motor drives
Inverters
Power switching circuits
Product Lifecycle
Currently in production
No known plans for discontinuation
Key Reasons to Choose This Product
Excellent power efficiency and low losses
High current handling capability
Compact and thermally efficient package
Suitable for a wide range of power management and control applications
Reliable and robust performance