Manufacturer Part Number
FDMS8560S
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistor FET, MOSFET Single
Product Features and Performance
N-Channel MOSFET
PowerTrench, SyncFET Series
Drain-Source Voltage (Vdss): 25V
Gate-Source Voltage (Vgs) Max: ±12V
On-Resistance (Rds(on)) Max: 1.8mΩ @ 30A, 10V
Continuous Drain Current (Id) Max: 30A (Ta), 70A (Tc)
Input Capacitance (Ciss) Max: 4350pF @ 13V
Power Dissipation Max: 2.5W (Ta), 65W (Tc)
Gate Charge (Qg) Max: 68nC @ 10V
Product Advantages
Low on-resistance for improved efficiency
High current handling capability
Suitable for high-frequency and high-power applications
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Threshold Voltage (Vgs(th)) Max: 2.2V @ 1mA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Operating Temperature: -55°C to 150°C (TJ)
Quality and Safety Features
RoHS3 Compliant
Compatibility
Surface Mount Mounting Type
8-PQFN (5x6) Package
Application Areas
Suitable for high-frequency and high-power applications, such as:
- Power converters
- Motor drives
- Switched-mode power supplies
Product Lifecycle
Currently in production
Replacement options available
Several Key Reasons to Choose This Product
Excellent efficiency and power handling due to low on-resistance
Suitable for high-frequency and high-power applications
Robust design and wide operating temperature range
RoHS3 compliance for environmental friendliness
Surface mount package for easy integration
