Manufacturer Part Number
FDMS8622
Manufacturer
onsemi
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Single
Product Features and Performance
N-Channel MOSFET
100V Drain-Source Voltage
±20V Gate-Source Voltage
56mΩ On-Resistance @ 4.8A, 10V
8A Continuous Drain Current @ 25°C
5A Continuous Drain Current @ 100°C
400pF Input Capacitance @ 50V
5W Power Dissipation @ 25°C
31W Power Dissipation @ 100°C
7nC Gate Charge @ 10V
Product Advantages
High power efficiency
Low on-resistance
High current handling capability
Suitable for high voltage applications
Key Technical Parameters
Drain-Source Voltage: 100V
Gate-Source Voltage: ±20V
On-Resistance: 56mΩ
Continuous Drain Current: 4.8A @ 25°C, 16.5A @ 100°C
Input Capacitance: 400pF @ 50V
Power Dissipation: 2.5W @ 25°C, 31W @ 100°C
Gate Charge: 7nC @ 10V
Quality and Safety Features
RoHS3 Compliant
AEC-Q101 Qualified
Compatibility
Surface Mount Package: 8-PQFN (5x6)
Application Areas
Power management
Motor control
Switching power supplies
Industrial automation
Automotive electronics
Product Lifecycle
This product is currently available and in production.
No information on discontinuation or replacement available.
Key Reasons to Choose This Product
High power efficiency and low on-resistance for improved system performance
High current handling capability for demanding applications
Suitable for high voltage applications up to 100V
Compact surface mount package for space-constrained designs
RoHS3 compliance and AEC-Q101 qualification for reliable performance
