SIZF906DT-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIZF906DT-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Products

Transistors FETs, MOSFETs Arrays

Product Features and Performance

RoHS3 Compliant

8-PowerPair (6x5) Manufacturer's Packaging

Surface Mount Mounting Type

TrenchFET Gen IV Series

Tape & Reel (TR) Package

-55°C ~ 150°C (TA) Operating Temperature Range

38W (Tc) Power Max, 83W (Tc) Power Max

2 N-Channel (Half Bridge) Configuration

30V Drain to Source Voltage (Vdss)

8mOhm @ 15A, 10V Rds On (Max) @ Id, Vgs, 1.17mOhm @ 20A, 10V Rds On (Max) @ Id, Vgs

MOSFET (Metal Oxide) Technology

60A (Tc) Current Continuous Drain (Id) @ 25°C

2000pF @ 15V Input Capacitance (Ciss) (Max) @ Vds, 8200pF @ 15V Input Capacitance (Ciss) (Max) @ Vds

2V @ 250A Vgs(th) (Max) @ Id

22nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs, 92nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs

Product Advantages

RoHS3 Compliant

Surface Mount Mounting

Wide Operating Temperature Range

High Power Handling Capability

Low On-Resistance

High Current Capability

Low Input Capacitance

Low Gate Charge

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

Rds On (Max) @ Id, Vgs: 3.8mOhm @ 15A, 10V, 1.17mOhm @ 20A, 10V

Current Continuous Drain (Id) @ 25°C: 60A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 2000pF @ 15V, 8200pF @ 15V

Vgs(th) (Max) @ Id: 2.2V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 22nC @ 4.5V, 92nC @ 4.5V

Quality and Safety Features

RoHS3 Compliant

Compatibility

Surface Mount Mounting

Application Areas

Suitable for a wide range of applications requiring high-power, high-current discrete semiconductor devices

Product Lifecycle

This product is an actively supported and available model. There are no known plans for discontinuation or replacement at this time.

Key Reasons to Choose This Product

RoHS3 Compliance

Surface Mount Mounting for easy integration

Wide -55°C to 150°C Operating Temperature Range

High Power Handling Capability up to 83W

Low On-Resistance down to 1.17mOhm

High Current Capability up to 60A

Low Input Capacitance down to 2000pF

Low Gate Charge down to 22nC

Robust and Reliable MOSFET Technology