SIZ980DT-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIZ980DT-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Arrays

Product Features and Performance

2 N-Channel (Dual), Schottky Configuration

Drain to Source Voltage (Vdss): 30V

Rds On (Max) @ Id, Vgs: 6.7mOhm @ 15A, 10V, 1.6mOhm @ 19A, 10V

MOSFET (Metal Oxide) Technology

Current Continuous Drain (Id) @ 25°C: 20A (Tc), 60A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 930pF @ 15V, 4600pF @ 15V

Vgs(th) (Max) @ Id: 2.2V @ 250A

Gate Charge (Qg) (Max) @ Vgs: 8.1nC @ 4.5V, 35nC @ 4.5V

Product Advantages

High power density

Low on-resistance

Optimized for high-efficiency, high-power applications

Key Technical Parameters

Power Max: 20W, 66W

Operating Temperature: -55°C ~ 150°C (TJ)

Mounting Type: Surface Mount

Quality and Safety Features

Manufacturer's packaging: 8-PowerPair (6x5)

Package / Case: 8-PowerWDFN

Supplier Device Package: 8-PowerPair (6x5)

Compatibility

Series: TrenchFET

Package: Tape & Reel (TR)

Application Areas

Suitable for high-efficiency, high-power applications

Product Lifecycle

No information on discontinuation or availability of replacements/upgrades

Key Reasons to Choose This Product

High power density

Low on-resistance

Optimized for high-efficiency, high-power applications

Wide operating temperature range

Robust packaging and mounting options