Manufacturer Part Number
SIZ920DT-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays
Product Features and Performance
N-Channel MOSFET Array
2 devices in a single package
High power density
Low on-resistance
Fast switching speed
Wide operating temperature range (-55°C to 150°C)
High power capability (39W, 100W)
Product Advantages
Compact package size
Improved efficiency
Reduced component count
Simplified board layout
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
On-Resistance (Rds(on)): 7.1mΩ @ 18.9A, 10V
Continuous Drain Current (Id): 40A @ 25°C
Input Capacitance (Ciss): 1260pF @ 15V
Gate Threshold Voltage (Vgs(th)): 2.5V @ 250A
Gate Charge (Qg): 35nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Suitable for high-reliability applications
Compatibility
Surface mount package
Compatible with standard MOSFET and power management applications
Application Areas
Power conversion
Motor control
Lighting
Industrial and consumer electronics
Product Lifecycle
This product is currently available
No discontinuation or replacement information is provided
Key Reasons to Choose This Product
High power density and efficiency
Low on-resistance for improved performance
Fast switching speed for improved system response
Wide operating temperature range for versatile applications
Compact package size for space-constrained designs
Simplified board layout and reduced component count
SIZ914DT-GE3Electro-Films (EFI) / Vishay