SIZ920DT-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIZ920DT-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Products - Transistors - FETs, MOSFETs - Arrays

Product Features and Performance

N-Channel MOSFET Array

2 devices in a single package

High power density

Low on-resistance

Fast switching speed

Wide operating temperature range (-55°C to 150°C)

High power capability (39W, 100W)

Product Advantages

Compact package size

Improved efficiency

Reduced component count

Simplified board layout

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

On-Resistance (Rds(on)): 7.1mΩ @ 18.9A, 10V

Continuous Drain Current (Id): 40A @ 25°C

Input Capacitance (Ciss): 1260pF @ 15V

Gate Threshold Voltage (Vgs(th)): 2.5V @ 250A

Gate Charge (Qg): 35nC @ 10V

Quality and Safety Features

RoHS3 Compliant

Suitable for high-reliability applications

Compatibility

Surface mount package

Compatible with standard MOSFET and power management applications

Application Areas

Power conversion

Motor control

Lighting

Industrial and consumer electronics

Product Lifecycle

This product is currently available

No discontinuation or replacement information is provided

Key Reasons to Choose This Product

High power density and efficiency

Low on-resistance for improved performance

Fast switching speed for improved system response

Wide operating temperature range for versatile applications

Compact package size for space-constrained designs

Simplified board layout and reduced component count