SIZ988DT-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIZ988DT-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Arrays

Product Features and Performance

2 N-Channel (Dual) Configuration

30V Drain to Source Voltage (Vdss)

5mOhm @ 10A, 10V and 4.1mOhm @ 19A, 10V Rds On (Max) @ Id, Vgs

MOSFET (Metal Oxide) Technology

40A (Tc) and 60A (Tc) Continuous Drain Current (Id) @ 25°C

1000pF @ 15V and 2425pF @ 15V Input Capacitance (Ciss) (Max) @ Vds

4V @ 250A and 2.2V @ 250A Vgs(th) (Max) @ Id

5nC @ 4.5V and 23.1nC @ 4.5V Gate Charge (Qg) (Max) @ Vgs

Product Advantages

High power density

Efficient heat dissipation

Low on-resistance

Key Technical Parameters

2W and 40W Max Power

-55°C ~ 150°C (TJ) Operating Temperature

8-PowerPair Manufacturer's packaging

8-PowerWDFN Package / Case

Tape & Reel (TR) Package

Quality and Safety Features

Suitable for high-power, high-efficiency applications

Robust design for reliable performance

Compatibility

Compatible with a wide range of electronic systems and power applications

Application Areas

Power supplies

Motor drives

Electrical/electronic systems

Industrial and consumer electronics

Product Lifecycle

Current production model

Replacement or upgrade options may be available in the future

Key Reasons to Choose This Product

High power density and efficient heat dissipation

Low on-resistance for improved efficiency

Robust design for reliable performance in demanding applications

Compatibility with a wide range of electronic systems and power applications