SIZ916DT-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIZ916DT-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance dual N-channel MOSFET in a compact 8-PowerPair (6x5) package

Product Features and Performance

Optimized for high-frequency, high-power switching applications

Low on-resistance and fast switching speeds

Tight parameter matching between the two channels

Product Advantages

Efficient heat dissipation due to compact package

Improved system reliability and performance

Reduced board space requirement

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

On-resistance (Rds(on)): 6.4mΩ @ 19A, 10V

Continuous Drain Current (Id): 16A @ 25°C, 40A

Input Capacitance (Ciss): 1208pF @ 15V

Gate Threshold Voltage (Vgs(th)): 2.4V @ 250µA

Gate Charge (Qg): 26nC @ 10V

Quality and Safety Features

RoHS3 compliant

Suitable for high-temperature operation (-55°C to 150°C)

Compatibility

Suitable for a wide range of high-frequency, high-power switching applications

Application Areas

Switch-mode power supplies

Motor drives

Industrial and automotive electronics

Product Lifecycle

This product is currently in production and is not nearing discontinuation

Replacement or upgrade options may be available from Vishay/Siliconix

Key Reasons to Choose This Product

High efficiency and performance due to low on-resistance and fast switching speeds

Compact and thermally efficient package for improved system reliability

Tight parameter matching between the two channels for improved system performance

Suitable for a wide range of high-frequency, high-power switching applications

Ongoing product availability and potential upgrade options