SIZ918DT-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIZ918DT-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Discrete Semiconductor Product

Transistors FETs, MOSFETs Arrays

Product Features and Performance

ROHS3 Compliant

8-PowerPair (6x5) Manufacturer's Packaging

TrenchFET Series

8-PowerWDFN Package / Case

Tape & Reel (TR) Package

Operating Temperature: -55°C ~ 150°C (TJ)

Power Rating: 29W, 100W

2 N-Channel (Half Bridge) Configuration

Drain to Source Voltage (Vdss): 30V

On-Resistance (Rds On): 12mOhm @ 13.8A, 10V

MOSFET (Metal Oxide) Technology

Continuous Drain Current (Id): 16A @ 25°C, 28A @ 25°C

Input Capacitance (Ciss): 790pF @ 15V

Logic Level Gate FET Feature

Gate Threshold Voltage (Vgs(th)): 2.2V @ 250A

Gate Charge (Qg): 21nC @ 10V

Surface Mount Mounting Type

Product Advantages

High power handling capability

Low on-resistance for improved efficiency

Logic level gate for easy driving

Compact surface mount package

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

On-Resistance (Rds On): 12mOhm

Continuous Drain Current (Id): 16A, 28A

Input Capacitance (Ciss): 790pF

Gate Threshold Voltage (Vgs(th)): 2.2V

Gate Charge (Qg): 21nC

Quality and Safety Features

ROHS3 Compliant

Compatibility

Compatible with various electronic circuit designs requiring high power, low on-resistance MOSFET devices

Application Areas

Switching power supplies

Motor drives

Industrial and consumer electronics

Product Lifecycle

Current production model, no known discontinuation plans

Replacements and upgrades may be available in the future

Key Reasons to Choose This Product

High power handling capability up to 100W

Excellent efficiency due to low on-resistance

Logic level gate for easy driving

Compact surface mount package

Proven reliability and quality from Vishay / Siliconix