Manufacturer Part Number
SIZ918DT-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Transistors FETs, MOSFETs Arrays
Product Features and Performance
ROHS3 Compliant
8-PowerPair (6x5) Manufacturer's Packaging
TrenchFET Series
8-PowerWDFN Package / Case
Tape & Reel (TR) Package
Operating Temperature: -55°C ~ 150°C (TJ)
Power Rating: 29W, 100W
2 N-Channel (Half Bridge) Configuration
Drain to Source Voltage (Vdss): 30V
On-Resistance (Rds On): 12mOhm @ 13.8A, 10V
MOSFET (Metal Oxide) Technology
Continuous Drain Current (Id): 16A @ 25°C, 28A @ 25°C
Input Capacitance (Ciss): 790pF @ 15V
Logic Level Gate FET Feature
Gate Threshold Voltage (Vgs(th)): 2.2V @ 250A
Gate Charge (Qg): 21nC @ 10V
Surface Mount Mounting Type
Product Advantages
High power handling capability
Low on-resistance for improved efficiency
Logic level gate for easy driving
Compact surface mount package
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
On-Resistance (Rds On): 12mOhm
Continuous Drain Current (Id): 16A, 28A
Input Capacitance (Ciss): 790pF
Gate Threshold Voltage (Vgs(th)): 2.2V
Gate Charge (Qg): 21nC
Quality and Safety Features
ROHS3 Compliant
Compatibility
Compatible with various electronic circuit designs requiring high power, low on-resistance MOSFET devices
Application Areas
Switching power supplies
Motor drives
Industrial and consumer electronics
Product Lifecycle
Current production model, no known discontinuation plans
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
High power handling capability up to 100W
Excellent efficiency due to low on-resistance
Logic level gate for easy driving
Compact surface mount package
Proven reliability and quality from Vishay / Siliconix
SIZ920DP-T1-GE3Electro-Films (EFI) / Vishay