SIZ998BDT-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIZ998BDT-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel power MOSFET transistor

Part of the TrenchFET Gen IV series

Product Features and Performance

2 N-channel MOSFET transistors in a dual package

Schottky configuration

Wide operating temperature range: -55°C to 150°C

Product Advantages

Low on-resistance for efficient power switching

High current handling capability

Compact PowerPair (6x5) package for space-saving design

Key Technical Parameters

Drain-to-source voltage (Vdss): 30V

On-resistance (Rds(on)): 4.39mΩ @ 15A, 10V; 2.4mΩ @ 19A, 10V

Continuous drain current (Id): 23.7A (Ta), 54.8A (Tc), 36.2A (Ta), 94.6A (Tc)

Input capacitance (Ciss): 790pF @ 15V, 2130pF @ 15V

Gate threshold voltage (Vgs(th)): 2.2V @ 250A

Gate charge (Qg): 18nC @ 10V, 46.7nC @ 10V

Power dissipation: 3.8W (Ta), 20W (Tc), 4.8W (Ta), 32.9W (Tc)

Quality and Safety Features

MOSFET technology for reliable and efficient power switching

RoHS-compliant and halogen-free

Compatibility

Suitable for a wide range of power conversion and control applications

Application Areas

Power supplies

Motor drives

Lighting systems

Industrial automation

Automotive electronics

Product Lifecycle

Active product

Replacement and upgrade options available

Key Reasons to Choose This Product

High current handling and low on-resistance for efficient power switching

Compact and space-saving package design

Wide operating temperature range for versatile applications

Reliable MOSFET technology with quality and safety features