SIZ998DT-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIZ998DT-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

Dual N-Channel MOSFET with Schottky diodes

Part of the TrenchFET series

Product Features and Performance

Low on-resistance for high efficiency

Fast switching for high-frequency applications

High power density and thermal capability

Optimized for synchronous rectification and other power conversion applications

Product Advantages

Excellent thermal management for efficient power handling

Reduced power losses for improved energy efficiency

Reliable performance in demanding applications

Key Technical Parameters

30V Drain-to-Source Voltage

7mΩ on-resistance at 15A, 10V

8mΩ on-resistance at 19A, 10V

20A continuous drain current at 25°C

60A continuous drain current at 25°C (Tc)

930pF input capacitance at 15V

2620pF input capacitance at 15V

2V gate threshold voltage at 250A

1nC gate charge at 4.5V

8nC gate charge at 4.5V

Quality and Safety Features

Robust design for reliable operation

Strict quality control and testing processes

Compliance with relevant safety standards

Compatibility

Suitable for a wide range of power conversion and control applications

Application Areas

Synchronous rectification

Power supplies

Motor drives

Industrial and consumer electronics

Product Lifecycle

Currently in production

No known plans for discontinuation

Replacement or upgrade options available if needed

Several Key Reasons to Choose This Product

Excellent power handling and thermal management capabilities

Low on-resistance for high efficiency

Fast switching for high-frequency applications

Reliable performance in demanding environments

Compatibility with a wide range of power conversion and control applications