Manufacturer Part Number
SIR626LDP-T1-RE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel TrenchFET® Gen IV power MOSFET in a PowerPAK SO-8 package
Product Features and Performance
Optimized for high-frequency, high-efficiency applications
Low on-resistance for low conduction losses
Fast switching for high-frequency operation
Low gate charge for efficient drive
Product Advantages
Excellent power-to-size ratio
High power density
Improved thermal performance
Reduced switching and conduction losses
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 60 V
Max Gate-to-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 1.5 mΩ @ 20 A, 10 V
Continuous Drain Current (Id): 45.6 A (Ta), 186 A (Tc)
Input Capacitance (Ciss): 5900 pF @ 30 V
Power Dissipation (Pd): 6.25 W (Ta), 104 W (Tc)
Quality and Safety Features
RoHS3 compliant
AEC-Q101 qualified
Compatibility
Surface mount package (PowerPAK SO-8)
Application Areas
High-frequency, high-efficiency power conversion
Automotive electronics
Industrial applications
Telecom equipment
Server and computing applications
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available
Key Reasons to Choose This Product
Excellent power density and efficiency
Robust design for high-reliability applications
Optimized for high-frequency operation
Easy to integrate into power systems
Proven performance and reliability