Manufacturer Part Number
SIR610DP-T1-RE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET Transistor
Product Features and Performance
Drain to Source Voltage (Vdss) of 200 V
Vgs (Max) of ±20V
Rds On (Max) of 31.9mOhm @ 10A, 10V
Continuous Drain Current (Id) of 35.4A at 25°C
Input Capacitance (Ciss) of 1380 pF @ 100 V
Power Dissipation (Max) of 104W at Tc
Vgs(th) (Max) of 4V @ 250A
Drive Voltage (Max Rds On, Min Rds On) of 7.5V, 10V
Gate Charge (Qg) (Max) of 38 nC @ 10 V
Product Advantages
High voltage and high current capability
Low on-resistance
High power dissipation
Wide temperature range of -55°C to 150°C
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Mounting Type: Surface Mount
Quality and Safety Features
RoHS3 Compliant
Compatibility
Compatible with PowerPAK SO-8 package
Application Areas
Suitable for high-power, high-voltage applications such as motor drives, power supplies, and industrial controls
Product Lifecycle
Currently available, no information on discontinuation or replacements
Key Reasons to Choose This Product
Excellent performance in high voltage, high current applications
Robust design with wide temperature range
Efficient power handling with low on-resistance
Compact surface mount package for easy integration
SIR510DP-T1-RE3Vishay