SIR610DP-T1-RE3 - Vishay Siliconix

Manufacturer Part Number

SIR610DP-T1-RE3

Manufacturer

Vishay / Siliconix

Introduction

N-Channel MOSFET Transistor

Product Features and Performance

Drain to Source Voltage (Vdss) of 200 V

Vgs (Max) of ±20V

Rds On (Max) of 31.9mOhm @ 10A, 10V

Continuous Drain Current (Id) of 35.4A at 25°C

Input Capacitance (Ciss) of 1380 pF @ 100 V

Power Dissipation (Max) of 104W at Tc

Vgs(th) (Max) of 4V @ 250A

Drive Voltage (Max Rds On, Min Rds On) of 7.5V, 10V

Gate Charge (Qg) (Max) of 38 nC @ 10 V

Product Advantages

High voltage and high current capability

Low on-resistance

High power dissipation

Wide temperature range of -55°C to 150°C

Key Technical Parameters

Technology: MOSFET (Metal Oxide)

FET Type: N-Channel

Mounting Type: Surface Mount

Quality and Safety Features

RoHS3 Compliant

Compatibility

Compatible with PowerPAK SO-8 package

Application Areas

Suitable for high-power, high-voltage applications such as motor drives, power supplies, and industrial controls

Product Lifecycle

Currently available, no information on discontinuation or replacements

Key Reasons to Choose This Product

Excellent performance in high voltage, high current applications

Robust design with wide temperature range

Efficient power handling with low on-resistance

Compact surface mount package for easy integration