Manufacturer Part Number
SIR494DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel MOSFET
Optimized for high-power switching applications
Product Features and Performance
Low on-resistance and high current capability
Trench MOSFET technology for improved efficiency
Fast switching speed
Wide operating temperature range (-55°C to 150°C)
Robust and reliable design
Product Advantages
Excellent thermal performance
High power density
Efficient power conversion
Reliable operation in demanding applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 12V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 1.2mOhm @ 20A, 10V
Continuous Drain Current (Id): 60A @ 25°C (Tc)
Input Capacitance (Ciss): 6900pF @ 6V
Power Dissipation: 6.25W (Ta), 104W (Tc)
Quality and Safety Features
RoHS3 compliant
Meets stringent quality and reliability standards
Compatibility
Surface mount package (PowerPAK SO-8)
Suitable for high-power switching applications
Application Areas
Power supplies
Motor drives
Inverters
Industrial equipment
Product Lifecycle
Currently available
No plans for discontinuation
Upgrades or replacements may be available in the future
Key Reasons to Choose This Product
Excellent thermal and electrical performance
High power density and efficiency
Reliable operation in demanding applications
Proven Trench MOSFET technology
Compatibility with surface mount assembly
Meets quality and safety standards
SIR500DP-T1-RE3Vishay