Manufacturer Part Number
SIR616DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
ROHS3 Compliant
PowerPAK SO-8 Package
Surface Mount Mounting
ThunderFET Series
Tape & Reel Packaging
Operating Temperature: -55°C to 150°C
Drain to Source Voltage (Vdss): 200V
Maximum Gate-Source Voltage (Vgs): ±20V
On-State Resistance (Rds(on)): 50.5mΩ @ 10A, 10V
MOSFET Technology
Continuous Drain Current (Id): 20.2A @ 25°C
Input Capacitance (Ciss): 1450pF @ 100V
Maximum Power Dissipation: 52W
N-Channel FET Type
Threshold Voltage (Vgs(th)): 4V @ 250A
Drive Voltage Range: 7.5V (Max Rds(on)), 10V (Min Rds(on))
Gate Charge (Qg): 28nC @ 7.5V
Product Advantages
High voltage and current handling capability
Low on-state resistance
Efficient power operation
Wide temperature range
Key Technical Parameters
Voltage, current, and power ratings
Resistance, capacitance, and charge specifications
Temperature range
Quality and Safety Features
RoHS3 compliance
Reliable PowerPAK SO-8 package
Compatibility
Suitable for a variety of power electronic applications
Application Areas
Power conversion and control systems
Motor drives
Switched-mode power supplies
Industrial and automotive electronics
Product Lifecycle
Current product offering
No indication of discontinuation or replacement
Key Reasons to Choose
High performance in terms of voltage, current, and efficiency
Robust and reliable design for demanding applications
Wide operating temperature range
Ease of integration with surface mount packaging
SIR494DP-T1-GE3 MOSElectro-Films (EFI) / Vishay