Manufacturer Part Number
SIR624DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel MOSFET
Designed for power management and control applications
Product Features and Performance
200V drain-to-source voltage
6A continuous drain current at 25°C
Very low on-resistance of 60mΩ at 10A, 10V
Fast switching speeds
Low gate charge of 23nC at 7.5V
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power efficiency
Reliable and robust performance
Suitable for high-power applications
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 200V
Gate-to-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 60mΩ @ 10A, 10V
Continuous Drain Current (Id): 18.6A at 25°C
Input Capacitance (Ciss): 1110pF @ 100V
Power Dissipation (Tc): 52W
Quality and Safety Features
RoHS3 compliant
Suitable for use in high-reliability applications
Compatibility
Designed for surface mount applications
Compatible with PowerPAK SO-8 package
Application Areas
Power management and control systems
Automotive electronics
Industrial equipment
Telecommunication systems
Product Lifecycle
This product is currently in production
Replacement or upgraded models may become available in the future
Key Reasons to Choose This Product
Excellent power efficiency and performance
Reliable and robust design for high-power applications
Wide operating temperature range
RoHS3 compliance for use in various applications
Compatibility with standard surface mount packaging