SIR622DP-T1-RE3 - Vishay Siliconix

Manufacturer Part Number

SIR622DP-T1-RE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel power MOSFET

Designed for use in high-power, high-frequency switching applications

Product Features and Performance

Wide operating temperature range of -55°C to 150°C

Low on-resistance of 17.7 mΩ @ 20 A, 10 V

High continuous drain current of 12.6 A (Ta) and 51.6 A (Tc)

Low gate charge of 41 nC @ 10 V

Compact PowerPAK SO-8 package

Product Advantages

Excellent thermal management due to low on-resistance and high power dissipation

Efficient high-frequency switching performance

Reliable operation in harsh environments

Key Technical Parameters

Drain-to-Source Voltage (Vdss): 150 V

Gate-to-Source Voltage (Vgs Max): ±20 V

Input Capacitance (Ciss): 1516 pF @ 75 V

Power Dissipation (Max): 6.25 W (Ta), 104 W (Tc)

Quality and Safety Features

RoHS3 compliant

AEC-Q101 qualified

Compatibility

Suitable for use in a wide range of power electronics applications

Application Areas

Switch-mode power supplies

Motor drives

Inverters

Industrial and automotive electronics

Product Lifecycle

Current product, no discontinuation planned

Replacement or upgrade options available

Key Reasons to Choose This Product

Excellent thermal performance and power handling

Reliable high-frequency switching capabilities

Compact and efficient packaging

Wide operating temperature range

Compliance with industry standards