Manufacturer Part Number
SIR626DP-T1-RE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel enhancement-mode power MOSFET
Product Features and Performance
Very low on-resistance
High current capability
Fast switching speed
Suitable for high-frequency, high-efficiency power conversion applications
Product Advantages
Excellent thermal characteristics
Low gate charge for high-speed switching
Rugged and reliable design
Key Technical Parameters
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20 V
Rds On (Max) @ Id, Vgs: 1.7 mOhm @ 20 A, 10 V
Current Continuous Drain (Id) @ 25°C: 100 A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 5130 pF @ 30 V
Power Dissipation (Max): 104 W (Tc)
Vgs(th) (Max) @ Id: 3.4 V @ 250 A
Drive Voltage (Max Rds On, Min Rds On): 6 V, 10 V
Gate Charge (Qg) (Max) @ Vgs: 78 nC @ 7.5 V
Quality and Safety Features
ROHS3 Compliant
Suitable for high-reliability applications
Compatibility
Compatible with PowerPAK SO-8 package
Application Areas
High-frequency, high-efficiency power conversion applications
Switching power supplies
Motor drives
Industrial and consumer power electronics
Product Lifecycle
This product is an actively supported and available part from Vishay/Siliconix.
Several Key Reasons to Choose This Product
Excellent thermal characteristics for high-power applications
Low on-resistance and high current capability
Fast switching speed for high-efficiency power conversion
Rugged and reliable design for industrial and consumer applications
Compatibility with standard PowerPAK SO-8 package
SIR626DPElectro-Films (EFI) / Vishay