Manufacturer Part Number
SIR638DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET in the PowerPAK SO-8 package
Product Features and Performance
Optimized for high-frequency, high-current switching applications
Very low on-resistance (0.88 mΩ max. at 20 A, 10 V)
High current capability (100 A continuous drain current at 25°C)
High power dissipation (104 W max. at 25°C)
Low gate charge (204 nC max. at 10 V)
Wide operating temperature range (-55°C to 150°C)
Product Advantages
Excellent thermal efficiency
Compact and space-saving package
High reliability and ruggedness
Key Technical Parameters
Drain to Source Voltage (Vdss): 40 V
Gate-Source Voltage (Vgs): +20 V/-16 V
On-Resistance (Rds(on)): 0.88 mΩ max. at 20 A, 10 V
Continuous Drain Current (Id): 100 A at 25°C
Input Capacitance (Ciss): 10500 pF max. at 20 V
Power Dissipation (Pd): 104 W max. at 25°C
Quality and Safety Features
RoHS-3 compliant
Reliable and durable construction
Compatibility
Suitable for a wide range of high-frequency, high-current switching applications
Application Areas
Automotive electronics
Industrial power supplies
Motor drives
Telecommunications equipment
Switching power supplies
Product Lifecycle
Currently in production
No plans for discontinuation at this time
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Exceptional power handling and efficiency
Compact and space-saving package
High reliability and long operating life
Suitable for a wide range of high-power applications
Well-supported by the manufacturer with available replacement and upgrade options
SIR632DP-T1-RE3-HElectro-Films (EFI) / Vishay