Manufacturer Part Number
SIR640DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel TrenchFET power MOSFET suitable for a wide range of power management and control applications.
Product Features and Performance
Optimized for high-efficiency, high-frequency switching
Low on-resistance and fast switching speeds
Capable of handling high current up to 60A
Product Advantages
Excellent thermal management due to PowerPAK SO-8 package
Superior RDS(on) performance
High power density
Key Technical Parameters
Drain to Source Voltage (Vdss): 40V
On-resistance (RDS(on)): 1.7mΩ @ 20A, 10V
Continuous Drain Current (ID): 60A @ 25°C
Input Capacitance (Ciss): 4930pF @ 20V
Operating Temperature: -55°C to 150°C
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount package (PowerPAK SO-8)
Compatible with a wide range of power management and control circuits
Application Areas
Telecommunications equipment
Industrial automation
Power supplies
Motor drives
Lighting systems
Product Lifecycle
Currently in production
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent efficiency and power density
Robust and reliable performance
Optimized for high-frequency switching
Suitable for a wide range of power management applications