Manufacturer Part Number
SIR662DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-channel MOSFET transistor
Part of the TrenchFET series
Product Features and Performance
60V drain-source voltage
60A continuous drain current
7mΩ maximum on-resistance
4365pF maximum input capacitance
96nC maximum gate charge
Operating temperature range: -55°C to 150°C
Product Advantages
Low on-resistance for high efficiency
High current handling capability
Compact PowerPAK SO-8 package
Key Technical Parameters
Vdss: 60V
Vgs(max): ±20V
Rds(on) max: 2.7mΩ @ 20A, 10V
Id continuous: 60A @ 25°C
Ciss max: 4365pF @ 30V
Qg max: 96nC @ 10V
Quality and Safety Features
RoHS3 compliant
PowerPAK SO-8 package
Compatibility
Surface mount package
Application Areas
Power management circuits
Motor control
Power supplies
Voltage regulators
Product Lifecycle
Current product, no discontinuation planned
Replacements and upgrades available
Key Reasons to Choose
Excellent performance-to-cost ratio
High current capability in a compact package
Proven reliability and quality from Vishay Siliconix
Wide operating temperature range