SIR680ADP-T1-RE3 - Vishay Siliconix

Manufacturer Part Number

SIR680ADP-T1-RE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel power MOSFET

Part of the TrenchFET Gen IV series

Product Features and Performance

Drain-source voltage (Vdss) of 80V

Maximum gate-source voltage (Vgs) of ±20V

Very low on-resistance (Rds(on)) of 2.88mΩ @ 20A, 10V

Continuous drain current (Id) of 30.7A (Ta) and 125A (Tc)

Input capacitance (Ciss) of 4415pF @ 40V

Power dissipation of 6.25W (Ta) and 104W (Tc)

Fast switching characteristics

Product Advantages

Excellent energy efficiency due to low on-resistance

Efficient heat dissipation enables high-power applications

Reliable performance across wide temperature range (-55°C to 150°C)

Key Technical Parameters

N-channel MOSFET technology

PowerPAK SO-8 surface mount package

Operating temperature range: -55°C to 150°C (TJ)

Gate threshold voltage (Vgs(th)) of 3.5V @ 250A

Gate drive voltage range: 7.5V (max Rds(on)), 10V (min Rds(on))

Gate charge (Qg) of 83nC @ 10V

Quality and Safety Features

Meets industrial and automotive quality standards

RoHS and REACH compliant

Compatibility

Suitable for a wide range of power electronic applications

Application Areas

Switch-mode power supplies

Motor drives

Power amplifiers

Industrial and automotive electronics

Product Lifecycle

Current production part

Replacement and upgrade options available

Key Reasons to Choose This Product

Excellent power efficiency and thermal performance

Reliable operation across wide temperature range

Optimized for high-power, high-current applications

Easy integration into power electronics designs

Backed by Vishay's reputation for quality and innovation