Manufacturer Part Number
SIR680ADP-T1-RE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET
Part of the TrenchFET Gen IV series
Product Features and Performance
Drain-source voltage (Vdss) of 80V
Maximum gate-source voltage (Vgs) of ±20V
Very low on-resistance (Rds(on)) of 2.88mΩ @ 20A, 10V
Continuous drain current (Id) of 30.7A (Ta) and 125A (Tc)
Input capacitance (Ciss) of 4415pF @ 40V
Power dissipation of 6.25W (Ta) and 104W (Tc)
Fast switching characteristics
Product Advantages
Excellent energy efficiency due to low on-resistance
Efficient heat dissipation enables high-power applications
Reliable performance across wide temperature range (-55°C to 150°C)
Key Technical Parameters
N-channel MOSFET technology
PowerPAK SO-8 surface mount package
Operating temperature range: -55°C to 150°C (TJ)
Gate threshold voltage (Vgs(th)) of 3.5V @ 250A
Gate drive voltage range: 7.5V (max Rds(on)), 10V (min Rds(on))
Gate charge (Qg) of 83nC @ 10V
Quality and Safety Features
Meets industrial and automotive quality standards
RoHS and REACH compliant
Compatibility
Suitable for a wide range of power electronic applications
Application Areas
Switch-mode power supplies
Motor drives
Power amplifiers
Industrial and automotive electronics
Product Lifecycle
Current production part
Replacement and upgrade options available
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
Reliable operation across wide temperature range
Optimized for high-power, high-current applications
Easy integration into power electronics designs
Backed by Vishay's reputation for quality and innovation