Manufacturer Part Number
SIR670DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
N-Channel MOSFET Transistor
Product Features and Performance
Trench MOSFET technology
Surface mount packaging (PowerPAK SO-8)
Wide operating temperature range (-55°C to 150°C)
High drain-source voltage (60V)
Low on-resistance (4.8mΩ @ 20A, 10V)
High continuous drain current (60A @ 25°C)
Low input capacitance (2815pF @ 30V)
High power dissipation (5W @ Ta, 56.8W @ Tc)
Product Advantages
Efficient power handling
Compact surface mount design
Reliable performance across a wide temperature range
Key Technical Parameters
Drain-Source Voltage (Vdss): 60V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 4.8mΩ @ 20A, 10V
Continuous Drain Current (Id): 60A @ 25°C
Input Capacitance (Ciss): 2815pF @ 30V
Power Dissipation: 5W @ Ta, 56.8W @ Tc
Threshold Voltage (Vgs(th)): 2.8V @ 250A
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
Suitable for a variety of power electronics and power management applications
Application Areas
Power supplies
Motor drives
Switching regulators
Power amplifiers
Battery chargers
Product Lifecycle
Current production model
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power handling capability
Compact surface mount design
Wide operating temperature range
Low on-resistance for efficient power conversion
Reliable performance and RoHS compliance