Manufacturer Part Number
SIR680DP-T1-RE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel MOSFET for power management and motor control applications
Product Features and Performance
Trench MOSFET design delivers high efficiency and low on-resistance
Capable of handling high continuous drain current up to 100A at 25°C
Low gate charge and input capacitance for fast switching
Wide operating temperature range of -55°C to 150°C
Product Advantages
Excellent power density and efficiency
Reliable performance in demanding applications
Easy integration into power supply and motor control circuits
Key Technical Parameters
Drain to Source Voltage (Vdss): 80V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2.9mΩ @ 20A, 10V
Continuous Drain Current (Id): 100A @ 25°C
Input Capacitance (Ciss): 5150pF @ 40V
Power Dissipation (Pc): 104W @ Tc
Quality and Safety Features
RoHS3 compliant
Reliable trench MOSFET technology
Rigorous quality control and testing
Compatibility
Surface mount PowerPAK SO-8 package
Suitable for use in a wide range of power management and motor control applications
Application Areas
Power supplies
Motor drives
Industrial automation
Renewable energy systems
Product Lifecycle
Current production model, no plans for discontinuation
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent power efficiency and thermal performance
High current handling capability
Fast switching and low gate charge
Reliable and robust design for demanding applications
Easy integration into power management and motor control circuits