SIR680LDP-T1-RE3 - Vishay Siliconix

Manufacturer Part Number

SIR680LDP-T1-RE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance N-channel enhancement-mode power MOSFET

Product Features and Performance

Optimized for high-frequency, high-current switching applications

Low on-resistance for improved efficiency

High switching speed and low gate charge for fast, efficient switching

Robust design with low gate-to-drain and gate-to-source capacitances

Product Advantages

Excellent power handling capabilities

High current capability

Fast switching speed

Low on-resistance for low power losses

Compact PowerPAK SO-8 package

Key Technical Parameters

Drain to Source Voltage (Vdss): 80 V

Maximum Gate-to-Source Voltage (Vgs): ±20 V

On-Resistance (Rds(on)): 2.8 mΩ @ 20 A, 10 V

Continuous Drain Current (Id): 31.8 A (Ta), 130 A (Tc)

Input Capacitance (Ciss): 7250 pF @ 40 V

Power Dissipation: 6.25 W (Ta), 104 W (Tc)

Operating Temperature Range: -55°C to 150°C (TJ)

Quality and Safety Features

Robust design for reliable performance

Meets relevant safety and environmental standards

Compatibility

Suitable for a wide range of high-frequency, high-current switching applications

Application Areas

Switching power supplies

Motor drives

Electric vehicle power systems

Industrial and consumer electronics

Product Lifecycle

Current production model, no discontinuation planned

Several Key Reasons to Choose This Product

Excellent power handling capabilities and high current capability

Fast switching speed for efficient, high-frequency operation

Low on-resistance for reduced power losses and improved efficiency

Compact PowerPAK SO-8 package for space-constrained designs

Robust design for reliable performance in demanding applications