Manufacturer Part Number
SIR770DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance, logic-level N-channel TrenchFET power MOSFET in a PowerPAK SO-8 Dual package.
Product Features and Performance
N-channel MOSFET with trench technology
Dual configuration in a single package
Low on-resistance of 21 mΩ
High continuous drain current of 8 A
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 900 pF
Logic-level gate with 2.8 V threshold voltage
Low gate charge of 21 nC
Product Advantages
Compact and space-saving dual configuration
Excellent thermal performance
Efficient power conversion
Reliable and robust design
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 30 V
Continuous Drain Current (Id): 8 A
On-Resistance (Rds(on)): 21 mΩ
Input Capacitance (Ciss): 900 pF
Gate Threshold Voltage (Vgs(th)): 2.8 V
Gate Charge (Qg): 21 nC
Quality and Safety Features
RoHS 3 compliant
Designed for reliable and safe operation
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switch-mode power supplies
Motor drives
DC/DC converters
Amplifiers
General power management
Product Lifecycle
Currently in production
No plans for discontinuation
Key Reasons to Choose This Product
Excellent performance-to-size ratio
Efficient power handling capabilities
Reliable and robust design
Ease of integration in power electronics circuits
Wide operating temperature range
