Manufacturer Part Number
SIR798DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-Channel MOSFET transistor
Part of the Vishay / Siliconix discrete semiconductor product lineup
Product Features and Performance
Capable of handling up to 60A of continuous drain current at 25°C
Supports operating temperatures from -55°C to 150°C (junction temperature)
Drain-to-source voltage rating of 30V
On-resistance (RDS(on)) as low as 2.05 ohms at 20A, 10V
Input capacitance (Ciss) of 5050 pF at 15V
Integrated Schottky diode body
Product Advantages
Excellent thermal performance for high current applications
Low on-resistance for improved efficiency
Compact PowerPAK SO-8 surface mount package
Key Technical Parameters
N-Channel MOSFET
Vdss: 30V
Vgs (max): ±20V
Rds(on) (max): 2.05 ohms @ 20A, 10V
Id (continuous, 25°C): 60A
Ciss (max): 5050 pF @ 15V
Qg (max): 130 nC @ 10V
Quality and Safety Features
Tested and qualified to AEC-Q101 standards for automotive applications
RoHS compliant
Compatibility
Compatible with a wide range of power management, motor control, and switching applications
Application Areas
Automotive electronics
Industrial motor drives
Power supplies
Battery charging systems
Switching power converters
Product Lifecycle
This product is an active, in-production part from Vishay / Siliconix
Replacement or upgraded options may be available in the future as technology advances
Key Reasons to Choose This Product
Excellent thermal performance and high current handling capability
Low on-resistance for improved efficiency
Compact surface mount packaging
Automotive-grade quality and reliability
Broad compatibility with power management and control applications
SiR808DPElectro-Films (EFI) / Vishay