Manufacturer Part Number
SIR800DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET with low on-resistance and high current capability
Product Features and Performance
Very low on-resistance of 2.3 mΩ @ 15A, 10V
Continuous drain current of 50A at 25°C case temperature
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 5125 pF @ 10V
High power dissipation of 5.2W at 25°C ambient and 69W at 25°C case temperature
Product Advantages
Excellent efficiency and thermal management
Suitable for high-current, high-power applications
Compact and space-saving PowerPAK SO-8 package
Key Technical Parameters
Drain-to-Source Voltage (Vdss): 20V
Gate-to-Source Voltage (Vgs): ±12V
Threshold Voltage (Vgs(th)): 1.5V @ 250A
Gate Charge (Qg): 133 nC @ 10V
Quality and Safety Features
ROHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with a wide range of electronic systems and power management circuits
Application Areas
Ideal for high-current, high-power applications such as:
- Power supplies
- Motor drives
- Switching regulators
- Automotive electronics
Product Lifecycle
This product is currently available and is not nearing discontinuation.
Replacement or upgrade options may be available from Vishay/Siliconix or other manufacturers.
Key Reasons to Choose This Product
Excellent performance and efficiency due to the low on-resistance and high current capability
Wide operating temperature range and high power dissipation make it suitable for demanding applications
Compact and space-saving PowerPAK SO-8 package
Proven reliability and quality from a reputable manufacturer, Vishay/Siliconix