SIR808DP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIR808DP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

N-Channel MOSFET in a PowerPAK SO-8 package

Product Features and Performance

High power density

Low on-resistance

High current capability

Optimized for high-performance power conversion and motor drive applications

Product Advantages

Excellent thermal efficiency

Robust and reliable performance

Compact and space-saving design

Key Technical Parameters

Drain to Source Voltage (Vdss): 25 V

Vgs (Max): ±20V

Rds On (Max) @ Id, Vgs: 8.9mOhm @ 17A, 10V

Current Continuous Drain (Id) @ 25°C: 20A (Tc)

Input Capacitance (Ciss) (Max) @ Vds: 815 pF @ 12.5 V

Power Dissipation (Max): 29.8W (Tc)

Vgs(th) (Max) @ Id: 2.5V @ 250A

Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V

Gate Charge (Qg) (Max) @ Vgs: 22.8 nC @ 10 V

Quality and Safety Features

RoHS3 compliant

Robust and reliable design for high-performance applications

Compatibility

Compatible with a wide range of power conversion and motor drive applications

Application Areas

Power conversion

Motor drives

Industrial and consumer electronics

Product Lifecycle

Currently available

No information on discontinuation or replacements

Key Reasons to Choose This Product

High power density and efficiency

Excellent thermal management

Robust and reliable performance

Compact and space-saving design

Suitable for a wide range of power conversion and motor drive applications