Manufacturer Part Number
SIR812DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET with low on-resistance and high current capability.
Product Features and Performance
Low on-resistance of 1.45 mOhm at 20A, 10V
Continuous drain current of 60A at 25°C
Wide operating temperature range from -55°C to 150°C
Low input capacitance of 10240 pF at 15V
High power dissipation of 6.25W at Ta and 104W at Tc
Product Advantages
Excellent thermal performance
Suitable for high-current applications
Efficient power conversion
Reliable and durable
Key Technical Parameters
Drain to Source Voltage (Vdss): 30V
Gate to Source Voltage (Vgs Max): ±20V
On-Resistance (Rds(on) Max): 1.45 mOhm @ 20A, 10V
Threshold Voltage (Vgs(th) Max): 2.3V @ 250A
Input Capacitance (Ciss Max): 10240 pF @ 15V
Power Dissipation (Max): 6.25W (Ta), 104W (Tc)
Quality and Safety Features
RoHS3 compliant
Manufactured in an ISO-certified facility
Compatibility
Compatible with a wide range of electronic systems and power applications
Application Areas
Power supplies
Motor drives
Inductive load switching
Automotive electronics
Industrial equipment
Product Lifecycle
This product is currently in active production and availability is good.
Replacement or upgraded models may be available in the future.
Key Reasons to Choose This Product
Excellent thermal performance and high current capability
Efficient power conversion with low on-resistance
Reliable and durable construction
Suitable for a wide range of high-power applications
Compliance with RoHS3 regulations