Manufacturer Part Number
SIR826ADP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-Channel TrenchFET power MOSFET
Product Features and Performance
Low on-resistance (RDS(on))
Fast switching speed
High current handling capability
Optimized for high-frequency switching applications
Suitable for high-power density designs
Reliable and robust design
Product Advantages
Excellent power efficiency
High power density
Improved thermal management
Reduced switching losses
Key Technical Parameters
Drain-to-Source Voltage (VDS): 80V
Maximum Gate-to-Source Voltage (VGS): ±20V
On-Resistance (RDS(on)): 5.5mΩ @ 20A, 10V
Continuous Drain Current (ID): 60A @ 25°C
Input Capacitance (Ciss): 2800pF @ 40V
Power Dissipation: 6.25W (Ta), 104W (Tc)
Quality and Safety Features
RoHS3 compliant
Designed for reliable and safe operation
Compatibility
Compatible with various high-frequency switching applications
Application Areas
Switching power supplies
Motor drives
Industrial and consumer electronics
Automotive electronics
Product Lifecycle
Current product, no discontinuation plans
Replacement or upgrade options available if needed
Key Reasons to Choose This Product
Excellent power efficiency and high power density
Fast switching speed and low on-resistance
Reliable and robust design for demanding applications
Optimized for high-frequency switching
Suitable for high-power density designs
Improved thermal management for enhanced performance