Manufacturer Part Number
SIR818DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-Channel TrenchFET MOSFET
Product Features and Performance
30V Drain-Source Voltage
8 mΩ On-Resistance
50A Continuous Drain Current
High Current Capability
Fast Switching Speed
Low Gate Charge
Low Input Capacitance
Wide Operating Temperature Range (-55°C to 150°C)
Excellent Thermal Characteristics
Product Advantages
Excellent power efficiency
Compact, space-saving design
Reliable and durable performance
Suitable for high-power applications
Key Technical Parameters
Drain-Source Voltage (Vdss): 30V
Maximum Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2.8 mΩ
Continuous Drain Current (Id): 50A
Input Capacitance (Ciss): 3660 pF
Power Dissipation (Pd): 5.2W (Ta), 69W (Tc)
Gate Charge (Qg): 95 nC
Quality and Safety Features
RoHS3 compliant
Reliable and robust construction
Undergoes extensive testing and quality control
Compatibility
Suitable for a wide range of power electronics applications
Application Areas
Switching power supplies
Motor drives
Industrial controls
Automotive electronics
Product Lifecycle
Currently available
No information on upcoming discontinuation or replacement
Key Reasons to Choose
High current capability and low on-resistance for efficient power conversion
Compact and space-saving design
Wide operating temperature range for robust performance
Excellent thermal characteristics for reliable operation
Proven reliability and quality assurance