SIR820DP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIR820DP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

High-performance power MOSFET with low on-resistance and high current handling capability

Product Features and Performance

N-channel MOSFET with 30V drain-source voltage

Very low on-resistance of 3mOhm @ 15A, 10V

High continuous drain current of 40A @ 25°C

Fast switching speed with low gate charge of 95nC @ 10V

Wide operating temperature range of -55°C to 150°C

Product Advantages

Excellent thermal performance and power handling

Ideal for high-current, high-efficiency power conversion applications

Small and compact PowerPAK SO-8 package

Key Technical Parameters

Drain to Source Voltage (Vdss): 30V

Gate-Source Voltage (Vgs Max): ±20V

On-Resistance (Rds(on) Max): 3mOhm @ 15A, 10V

Continuous Drain Current (Id): 40A @ 25°C

Input Capacitance (Ciss Max): 3512pF @ 15V

Power Dissipation (Max): 37.8W @ Tc

Quality and Safety Features

Compliant with RoHS and REACH regulations

Designed and manufactured to high quality standards

Compatibility

Compatible with various power supply, motor control, and power conversion applications

Application Areas

Switching power supplies

Motor drives

Power amplifiers

Industrial and consumer electronics

Product Lifecycle

This product is currently in production and widely available

No plans for discontinuation or replacement at this time

Key Reasons to Choose This Product

Excellent performance and efficiency with ultra-low on-resistance

Compact and thermally efficient PowerPAK SO-8 package

Wide operating temperature range and high current handling capability

Suitable for a variety of high-power, high-efficiency applications