Manufacturer Part Number
SIR836DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-channel power MOSFET in PowerPAK SO-8 package
Product Features and Performance
Trench technology for low on-resistance
High current capability up to 21A
Low input capacitance of 600 pF
Wide operating temperature range of -55°C to 150°C
Low gate charge of 18 nC
Product Advantages
Excellent efficiency and thermal performance
Compact and space-saving PowerPAK SO-8 package
Suitable for high-frequency switching applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 40 V
Gate-Source Voltage (Vgs): ±20 V
On-Resistance (Rds(on)): 19 mΩ @ 10 A, 10 V
Continuous Drain Current (Id): 21 A @ 25°C
Input Capacitance (Ciss): 600 pF @ 20 V
Power Dissipation (Max): 3.9 W (Ta), 15.6 W (Tc)
Quality and Safety Features
RoHS3 compliant
MOSFET technology with trench structure
Compatibility
Suitable for a wide range of high-frequency switching applications
Application Areas
Switch-mode power supplies
Motor drives
Inverters
Converters
Product Lifecycle
Current product, no indication of discontinuation
Replacements and upgrades may be available
Key Reasons to Choose This Product
High current capability and low on-resistance for efficient power conversion
Compact and thermally efficient PowerPAK SO-8 package
Wide operating temperature range for reliable performance
Suitable for high-frequency switching applications