Manufacturer Part Number
SIR804DP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-channel power MOSFET transistor with trench technology for high power applications
Product Features and Performance
Drain-to-Source Voltage: 100V
Gate-to-Source Voltage: ±20V
On-Resistance: 7.2mΩ @ 20A, 10V
Continuous Drain Current: 60A
Input Capacitance: 2450pF
Power Dissipation: 6.25W (Ta), 104W (Tc)
Gate Charge: 76nC @ 10V
Product Advantages
Trench MOSFET technology for high power density
Low on-resistance for efficient power conversion
High operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain-to-Source Voltage: 100V
Gate-to-Source Voltage: ±20V
On-Resistance: 7.2mΩ
Continuous Drain Current: 60A
Input Capacitance: 2450pF
Power Dissipation: 6.25W (Ta), 104W (Tc)
Gate Charge: 76nC
Quality and Safety Features
RoHS3 compliant
Reliable and robust design for high-power applications
Compatibility
Suitable for various high-power electronics and power conversion applications
Application Areas
Switching power supplies
Motor drives
Industrial automation
Automotive electronics
Product Lifecycle
This product is currently in production and available for purchase.
No immediate plans for discontinuation or replacement.
Key Reasons to Choose This Product
High power density and efficiency due to trench MOSFET technology
Wide operating temperature range of -55°C to 150°C
Low on-resistance for improved power conversion performance
Reliable and robust design for demanding high-power applications
RoHS3 compliance for environmental sustainability
SiR808DPElectro-Films (EFI) / Vishay