SIR664DP-T1-GE3 - Vishay Siliconix

Manufacturer Part Number

SIR664DP-T1-GE3

Manufacturer

Vishay / Siliconix

Introduction

This product is a high-performance N-channel MOSFET transistor from Vishay's TrenchFET series, designed for a wide range of power management and control applications.

Product Features and Performance

60V drain-to-source voltage rating

Ultra-low on-resistance of 6mΩ @ 20A, 10V

High continuous drain current of 60A at 25°C

Low input capacitance of 1750pF @ 30V

Low gate charge of 40nC @ 10V

Fast switching speed and low energy loss

Product Advantages

Excellent power efficiency and thermal management

Compact and space-saving PowerPAK SO-8 package

Suitable for high-current, high-frequency power applications

Robust and reliable performance

Key Technical Parameters

Vdss: 60V

Rds(on): 6mΩ @ 20A, 10V

Id: 60A @ 25°C

Ciss: 1750pF @ 30V

Qg: 40nC @ 10V

Vgs(th): 2.5V @ 250A

Quality and Safety Features

RoHS3 compliant

Designed and manufactured to high quality standards

Compatibility

Suitable for a wide range of power management and control applications

Drop-in replacement for various MOSFET devices in the same package and performance class

Application Areas

Power supplies

Motor drives

Inverters

Switching regulators

Battery management systems

Product Lifecycle

This product is actively supported and available for purchase

No known plans for discontinuation or end-of-life at this time

Replacement or upgrade options may be available in the future as technology evolves

Key Reasons to Choose This Product

Excellent power efficiency and thermal management

Compact and space-saving package

Robust and reliable performance

Suitable for high-current, high-frequency power applications

RoHS3 compliance for environmental sustainability