Manufacturer Part Number
SIR640ADP-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance N-Channel TrenchFET power MOSFET
Product Features and Performance
N-Channel MOSFET with TrenchFET technology
Low on-resistance and fast switching
Suitable for high-frequency, high-current switching applications
Product Advantages
Excellent thermal performance
Low gate charge for efficient switching
Robust and reliable design
Key Technical Parameters
Drain-Source Voltage (Vdss): 40V
Gate-Source Voltage (Vgs): ±20V
On-Resistance (Rds(on)): 2mΩ @ 20A, 10V
Continuous Drain Current (Id): 41.6A (Ta), 100A (Tc)
Input Capacitance (Ciss): 4240pF @ 20V
Power Dissipation: 6.25W (Ta), 104W (Tc)
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Surface mount (PowerPAK SO-8 package)
Application Areas
High-current, high-frequency switching applications
Power supplies, motor drives, industrial and consumer electronics
Product Lifecycle
Currently available
Replacements and upgrades may be available in the future
Key Reasons to Choose This Product
Excellent thermal and switching performance
Robust and reliable design
Suitable for a wide range of high-power applications
Cost-effective solution for high-current, high-frequency switching