Manufacturer Part Number
SI3477DV-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
This product is a single P-Channel MOSFET transistor from Vishay/Siliconix's TrenchFET series.
Product Features and Performance
Drain to Source Voltage (Vdss) of 12V
Vgs (Max) of ±10V
Extremely low on-resistance of 17.5mOhm @ 9A, 4.5V
High continuous drain current of 8A at 25°C
Wide operating temperature range of -55°C to 150°C
Low input capacitance of 2600pF @ 6V
Maximum power dissipation of 2W at Ta and 4.2W at Tc
Product Advantages
Excellent on-resistance performance for efficient power switching
High current handling capability
Robust thermal and voltage characteristics
Compact SOT-23-6 Thin, TSOT-23-6 surface mount package
Key Technical Parameters
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Vgs(th) (Max) @ Id: 1V @ 250A
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Quality and Safety Features
RoHS3 compliant
Tape and reel packaging for automated assembly
Compatibility
This product is compatible with a wide range of power supply, motor control, and other electronic circuit applications.
Application Areas
Power supplies
Motor drives
Switching regulators
Battery management systems
General purpose power switching
Product Lifecycle
This product is an active and currently available part from Vishay/Siliconix. There are no plans for discontinuation, and suitable replacement or upgrade options are readily available.
Key Reasons to Choose This Product
Exceptional on-resistance performance for efficient power switching
High current handling and thermal capability
Compact and easy to integrate surface mount package
Robust design for reliable operation across a wide temperature range
RoHS3 compliance for use in modern electronics
Readily available and actively supported by the manufacturer