Manufacturer Part Number
SI3474DV-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
N-channel TrenchFET MOSFET with low on-resistance and high drain-source voltage rating.
Product Features and Performance
Low on-resistance
High drain-source voltage rating
Low gate charge
Wide operating temperature range (-55°C to 150°C)
Suitable for high-frequency switching applications
Product Advantages
Excellent power efficiency
Reliable performance in harsh environments
Versatile for various power electronics applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 100 V
Gate-Source Voltage (Vgs): ±20 V
On-resistance (Rds(on)): 126 mΩ @ 2 A, 10 V
Continuous Drain Current (Id): 3.8 A @ 25°C
Input Capacitance (Ciss): 196 pF @ 50 V
Power Dissipation: 3.6 W @ Tc
Quality and Safety Features
RoHS3 compliant
Suitable for high-reliability applications
Compatibility
Compatible with various power electronics systems and circuits
Application Areas
Switching power supplies
Motor drives
Power conversion and control
Industrial and consumer electronics
Product Lifecycle
This product is currently in production and readily available.
No plans for discontinuation at this time.
Key Reasons to Choose This Product
Excellent performance characteristics (low on-resistance, high voltage rating)
Reliable operation in wide temperature range
Efficient power handling capabilities
Versatile for various power electronics applications
RoHS3 compliance for use in modern electronic systems