Manufacturer Part Number
SI3475DV-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
High-performance P-channel MOSFET with low on-resistance and high power density for use in a wide range of power management and control applications.
Product Features and Performance
Low on-resistance of 1.61Ω @ 900mA, 10V
High drain-to-source voltage of 200V
High continuous drain current of 950mA (Tc)
Low input capacitance of 500pF @ 50V
Fast switching speed with low gate charge of 18nC @ 10V
Product Advantages
Excellent power efficiency and thermal management
Compact surface mount package for high-density designs
Suitable for a wide range of power control and management applications
Key Technical Parameters
MOSFET technology
P-channel FET type
Vdss: 200V
Rds(on): 1.61Ω @ 900mA, 10V
Id: 950mA (Tc)
Ciss: 500pF @ 50V
Vgs(th): 4V @ 250μA
Qg: 18nC @ 10V
Quality and Safety Features
RoHS3 compliant
Reliable surface mount package (SOT-23-6, TSOT-23-6)
Compatibility
Compatible with a wide range of power management and control applications
Application Areas
Power management
Motor control
Switching power supplies
Battery chargers
Industrial and consumer electronics
Product Lifecycle
Currently in active production
No discontinuation or replacement plans announced
Key Reasons to Choose
Excellent power efficiency and thermal management
Compact surface mount package for high-density designs
Wide range of applications in power management and control
Reliable and RoHS3 compliant