Manufacturer Part Number
SI3476DV-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
The SI3476DV-T1-GE3 is a discrete N-Channel MOSFET transistor from Vishay Siliconix. It is part of the TrenchFET series and features a SOT-23-6 Thin, TSOT-23-6 package.
Product Features and Performance
N-Channel MOSFET transistor
80V Drain-Source Voltage
±20V Gate-Source Voltage
93mOhm maximum On-Resistance @ 3.5A, 10V
6A maximum Continuous Drain Current @ 25°C
195pF maximum Input Capacitance @ 40V
2W maximum Power Dissipation @ Ta, 3.6W @ Tc
5nC maximum Gate Charge @ 10V
Product Advantages
Low On-Resistance for efficient power switching
High voltage handling capability
Surface mount packaging for compact design
Wide operating temperature range of -55°C to 150°C
Key Technical Parameters
Drain-Source Voltage: 80V
Gate-Source Voltage: ±20V
On-Resistance: 93mOhm max
Continuous Drain Current: 4.6A
Input Capacitance: 195pF max
Power Dissipation: 2W max (Ta), 3.6W max (Tc)
Quality and Safety Features
RoHS3 compliant
6-TSOP package
Compatibility
Compatible with a wide range of electronic circuits and systems requiring a high-performance N-Channel MOSFET transistor.
Application Areas
Power switching circuits
Motor control
Power management
Industrial electronics
Consumer electronics
Product Lifecycle
Currently in production
Replacement and upgrade options available from Vishay/Siliconix
Key Reasons to Choose This Product
Excellent performance characteristics, including low on-resistance, high voltage and current handling
Compact surface mount packaging for space-efficient designs
Wide operating temperature range for robust operation
RoHS3 compliance for environmentally-friendly applications
Availability of compatible replacement and upgrade options from the manufacturer