Manufacturer Part Number
SI3473DV-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product
Single Transistor FET, MOSFET
Product Features and Performance
P-Channel MOSFET
Trench technology
Low on-resistance
High current capability
High switching speed
Product Advantages
Efficient power conversion
Compact design
Reliable performance
Key Technical Parameters
Drain to Source Voltage (Vdss): 12V
Gate-Source Voltage (Vgs Max): ±8V
On-Resistance (Rds On Max): 23mOhm
Continuous Drain Current (Id): 5.9A
Power Dissipation (Max): 1.1W
Gate Charge (Qg Max): 33nC
Quality and Safety Features
RoHS3 compliant
Suitable for high-temperature operation (-55°C to 150°C)
Compatibility
Surface mount package (SOT-23-6 Thin, TSOT-23-6)
Tape and reel packaging
Application Areas
Power management
Switching circuits
Motor control
Industrial electronics
Product Lifecycle
Active product
Replacements and upgrades available
Key Reasons to Choose This Product
Efficient power conversion and high current capability
Compact and reliable design
Suitable for high-temperature applications
Easy integration with surface mount technology
Available in tape and reel packaging for automated assembly