Manufacturer Part Number
SI3473CDV-T1-GE3
Manufacturer
Vishay / Siliconix
Introduction
Discrete Semiconductor Product - Transistor - FET, MOSFET - Single
Product Features and Performance
P-Channel MOSFET
Trench Technology
High Efficiency
Low On-Resistance
Fast Switching Speed
Wide Operating Temperature Range (-55°C to 150°C)
High Current Capability (8A Continuous Drain Current)
Low Input Capacitance (2010 pF)
Low Gate Charge (65 nC)
Low Power Dissipation (2W max at Ta, 4.2W max at Tc)
Product Advantages
Excellent Switching Performance
Reliable and Robust Design
Suitable for High-Frequency and High-Power Applications
Key Technical Parameters
Drain to Source Voltage (Vdss): 12V
Gate-Source Voltage (Vgs) Max: ±8V
On-Resistance (Rds(on)) Max: 22mΩ @ 8.1A, 4.5V
Threshold Voltage (Vgs(th)) Max: 1V @ 250A
Quality and Safety Features
RoHS3 Compliant
Meets Industrial and Automotive Safety Standards
Compatibility
Surface Mount, SOT-23-6 Package
Tape and Reel Packaging
Application Areas
Power Management Circuits
Motor Drives
Switching Regulators
Battery Chargers
Industrial and Automotive Electronics
Product Lifecycle
Current Production
Replacements and Upgrades Available
Key Reasons to Choose This Product
Excellent Electrical Performance
Compact and Efficient Design
Wide Temperature Range Operation
Reliable and Robust Construction
Compatibility with Industry Standards
Suitable for Diverse Power Electronics Applications
Si3473CDV-T1-GE3 MOSElectro-Films (EFI) / Vishay