Manufacturer Part Number
SI3469DV-T1-E3
Manufacturer
Vishay / Siliconix
Introduction
This is a discrete P-channel MOSFET transistor product from Vishay/Siliconix, part of the TrenchFET series.
Product Features and Performance
20V Drain-Source Voltage (Vdss)
±20V Gate-Source Voltage (Vgs)
30mΩ maximum On-Resistance (Rds(on)) at 6.7A, 10V
5A continuous Drain Current (Id) at 25°C
14W maximum Power Dissipation at 25°C
-55°C to 150°C Operating Temperature Range
Product Advantages
Low On-Resistance for efficient power switching
Trench MOSFET technology for high-density integration
Wide operating voltage and temperature range
Key Technical Parameters
MOSFET Technology: Trench
FET Type: P-Channel
Vgs(th) (Max): 3V @ 250µA
Gate Charge (Qg) (Max): 30nC @ 10V
Quality and Safety Features
RoHS3 Compliant
Compatibility
SOT-23-6 Thin, TSOT-23-6 Package
Tape & Reel Packaging
Application Areas
Power management and conversion
Motor control
Battery charging and discharging
General-purpose switching
Product Lifecycle
This is an active product, not nearing discontinuation.
Replacements and upgrades are available within the Vishay/Siliconix TrenchFET series.
Key Reasons to Choose This Product
Excellent power efficiency due to low On-Resistance
Wide operating voltage and temperature range
High reliability and quality from Vishay/Siliconix
Compatibility with standard surface mount packages
Suitable for a wide range of power switching applications